Quentin Courte

Quentin was born in Uccle, Belgium, in 1996. He received the B.S and M.S. degrees in electrical engineering in 2018 and 2020, respectively and is now a PhD student from Université catholique de Louvain, Belgium.
His research focuses on substrate and active devices simulation, modeling and characterization for monolithic integration of RF/mmW devices in SOI technology.
It also includes design of mmW ICs to assess substrates performances.

Research Projects

  • mm-wave IC design
  • On-wafer RF & mm-wave measurements
    • RF material property extraction
  • Silicon-based substrate modelling and development
      • RF-SOI: High Resistivity and Trap-Rich
      • PN junction-enhanced RF-Si substrates