Research Team
His research interests are the modeling, wideband characterization and fabrication of advanced SOI MOSFETs as well as micro and nanofabrication of MEMS / NEMS sensors and actuators, including the extraction of intrinsic material properties at nanometer scale. He has been IEEE Fellow since 2014. He was the recipient of the Médaille AMPERE 2019 in recognition in his vision and pioneering work for RF SOI.
His research interests cover the modeling, fabrication and characterization of mmWave Si-based devices and circuits. These research activities also include the integration of III-V and more exotic materials on Si for THz applications.
His research interest include small- and large-signal modeling of semiconductor substrates, and their characterization and optimization towards successful monolithic integration of silicon-based technology. He is also active in the design of mm-wave front-end circuitry.
His research focuses on the characterization of passive structures and MOSFETs on SOI technology at millimeter-wave frequencies, as well as on the design of mm-wave front-end circuitry.
His main interests are substrate modelling and high frequency characterization of RF devices. He is involved in the complete large-signal characterization of the advanced FDSOI transistors and circuit modules, of which he has designed a 28 GHz down-converting mixer in FDSOI.
He is pursuing a PhD working on Self-Heating Effects in Fully Depleted Silicon-on-Insulator MOSFETs along with the design of active and passive devices in this technology.
His research focuses on the integration of III-V materials on a silicon platform for next-generation RF integrated circuits applications in close collaboration with imec, Leuven, Belgium.
Her research interests are mainly on fabrication and characterization of CMOS dielectric materials (high-k materials and hBN) and the design of RF resonators for carrier lifetime characterization.
His research interests include RF characterization and modeling of advanced MOS transistors with a focus on the physical de-coupling of self-heating effect and non-linear effects on transport characteristics.
Maxime is pursuing a PhD at the CEA-Leti, Grenoble, co-supervised by Uclouvain’s Prof. Jean-Pierre Raskin. His work focusses on the monolithic integration of 28 nm FD-SOI switches and RF components by developing new high-performance RF substrates with localized trap-rich-like solutions.
He is pursuing a PhD working on monolithic integration of GaAs Schottky diodes on silicon for THz applications.
His research focuses on the design of efficient integrated (On-chip or In-package) antennas compatible with commercial semiconductor processes at Sub-THz frequencies.
He is also active in modelling, characterization and optimization of semiconductor substrates, towards successful monolithic integration of silicon-based technology.
His research areas mainly cover Millimeter-wave/THz communications. His focus is on On-wafer characterization of THz silicon-based devices. He is also involved in 60GHz On-chip antennas, chip antenna packaging, and millimeter-wave antenna design.
Join our Team
Interested in pursuing a PhD thesis as part of UCLouvain’s RF-SOI team?
Open positions for researchers are available here.