Funding: Feder/Wallonia
Description: Vertical furnace for oxidation of thin films
Sample holder: 25 x 3" wafers
Parameter: wet and dry oxidation
Description: Horizontal furnace for annealing, degasing and thin film oxidation
Sample holder: 3" wafers
Description: Horizontal furnaces for contaminated MOS oxidations and annealing
Parameter: up to 1000°C, dry oxidation
Description: rapid thermal processor
Temperature/rate up to 1050°C
Atmosphere N2, Ar, N2/H2, Ar/H2
Description: Table-top rapid heating and cooling system
Sample holder: max 2 x 2 cm2
Temperature/rate up to 1200°C at 50°C/s
Atmosphere N2, Ar, N2/H2, Ar/H2 or vacuum
Description: Horizontal furnace for poly-silicon doping with a solid source of phosphorus (P2O5)
Parameter: up to 1000°C
Description: Horizontal furnace dedicated to metals annealing