Thin-films deposition
Description: Dual E-gun evaporation system.
Sample holder: 3" wafers can be positionned for directional or conformal deposition.
Materials: Ti, Cr, Au, Pt, Pd, Ni, Mo, Cu, Ge, Al, Ag, Er, SiO2, Al2O3, TiO2 ...
Description: Single E-gun evaporation.
Sample holder: 3" wafers can be positionned for directional or conformal deposition.
Materials: Ti, Cr, Al, Ni, W
Funding: Feder/Wallonia
Description: Sputtering and E-beam deposition system.
Sample holder: 12 x 3", 8 x 4", 4 x 6" or 4 x 8" wafers.
Materials: Ti, Al, IGZO, Al/Si(1%)
Funding: Feder/Wallonia
Description: DC/RF-biased sputtering deposition system for conventional and reactive processes (O2) with in-situ measurement of the sample's curvature.
Sample holder: up to 3" wafer
Materials: Ni, Al, Ti, Zn and related oxides
Funding: Wallonia
Description: The Plasmalab 100 cluster is equipped with a LF/RF PECVD deposition chamber
Sample holder: up to 3 x 3" wafer or 1x8" wafer
Materials: Si3N4, SiO2 ...
Description: PECVD deposition system.
Sample holder: up to 8 x 3" wafers
Materials: Si3N4, SiO2
Funding: Feder/Wallonia
Description: Vertical LPCVD furnace
Sample holder: up to 25 x 3" wafers
Materials: Polysilicon
Funding: Feder/Wallonia
Description: Vertical LPCVD furnace
Sample holder: up to 25 x 3" wafers
Materials: Si3N4
Funding: FNRS
Description: ALD system for thermal or plasma-enhanced processes. The system is equipped with an in-situ ellispometer.
Sample holder: up to 8" wafer
Materials: HfO2, Al2O3, TiO2, SiO2, Pt
Description: Atmospheric pressure furnace for CVD deposition of thick layers of SiO2.
Sample holder: up to 25 x 3" wafers
Materials: SiO2