Thin-films etching
Funding: Feder/Wallonia
Description: ICP-RIE Plasma etching for chlorine-based processes
Sample holder: up to 8" wafers
Gases: Cl2, BCl3, He, Ar, N2, SF6, O2, CHF3.
Description: The Plasmalab 100 cluster is equipped with a ICP-RIE chamber.
Sample holder: up to 4" wafers
and up to 8" wafers after upgrade.Etch mode: RIE / ICP RIE (Inductive Coupled Plasma)
Description: RIE anisotropic etching of silicon and polysilicon
Sample holder: 3 x 3" wafers
Gases: SiCl4, N2, O2
Description: RIE anisotropic etching of silicon and polysilicon
Sample holder: 4 x 3" wafers
Gases: SF6, CHF3, CF4,O2, N2, Ar/N2(10%)
Description: Plasma descum resist stripper
Sample holder: 3" wafers to 8" wafers
Chamber size: diameter 258 mm, length 380 mm
Parameter: 0.5 to 1.5 mbar, HF Generator 0 - 600 W; 2450 MHz
Description: RF plasma barrel reactor for etching, ashing and cleaning
Sample holder: up to 1 x 3" wafers
Parameter: Solid-state 100 W 13.56 MHz RF power supply
Description: Various wet benches for standard Si cleaning and thin film etching
Sample holder: 25 x 3" wafers batches
Chemicals: H2SO4, H3PO4, TMAH, KOH, HF, BHF, metal etchants, ...
Description: Si isotropic etching for MEMS release or surface fluorination
Sample holder: Up to 6" wafers
Parameter: Pulsed etching process with max 4 torr of XeF2