Youssef Bendou

Youssef was born in Rabat, Morocco, in 1997.
Starting 2015, he studied for two years under engineering preparatory classes in CPGE Moulay Youssef Rabat, his hometown.
In 2017 he joined the Grenoble Institute of Technology in France to continue his engineering curriculum.
He then enrolled in an M.S. degree in micro and nanotechnology for integrated systems, jointly delivered in 2020 by l’École Polytechnique Fédérale de Lausanne (EPFL) in Switzerland, the Politecnico di Torino (Polito) in Italy, and Grenoble INP (Phelma).
He is currently pursuing the Ph.D. degree on the design of RF and mm-wave integrated circuits on FDSOI technology benefiting from the advantages of high resistivity substrates. His research focuses on improving state of the art circuits figures-of-merit by improving the substrate handle of the chip.

 

Research Projects

  • mm-wave IC design
  • CAD design and simulations
  • On-wafer measurements

 

  • Silicon-based substrate modelling and development
      • RF-SOI: High Resistivity and Trap-Rich
      • PN junction-enhanced RF-Si substrates

Publications

Conference Proceedings

  1. Y. Bendou, M. Rack, D. Lederer, A. Cathelin and J. -P. Raskin, “Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI,” 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS), Edinburgh, United Kingdom, 2023, pp. 1-5, doi: 10.1109/NEWCAS57931.2023.10198044.
  2. Y. Bendou, D. Lederer, A. Cathelin and J. -P. Raskin, “Substrate Noise Mitigation Using a High Resistivity Substrate: The Case of a 14 GHz VCO on 28nm FD-SOI CMOS,” 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Paris, France, 2024, pp. 355-358, doi: 10.23919/EuMIC61603.2024.10732151.

Journal Papers

  1. L. Nyssens, M. Nabet, M. Rack, Y. Bendou, et al., “Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications,” in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 72, no. 2, pp. 753-762, Feb. 2025, doi: 10.1109/TCSI.2024.3487636.