Silicon-Based RF Substrates
Design key components of RF and mm-wave Front-End Modules, i.e. Switches, Low-Noise Amplifiers (LNA) and Power Amplifiers (PA).
High-Quality Substrate Solutions
Need high resistivity material below the RF components. Standard (10 Ωcm) substrate is too conductive lossy and not linear enough.
Parasitic Surface Conduction (PSC) in Silicon
Decreasing the nominal doping increases resistvity in the silicon bulk, but at the interface with the SiO2 a parasitic effect takes place and severely degrades RF performance.
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Trap-Rich SOI
Introducing …
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PN-Junction Substrate
Solution to PSC involving interface implants
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Porous-Silicon
Many traps, lower permittivity (and therefore RF parasitic capacitance), post-process solution, …
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GaN on Si
Many traps, lower permittivity (and therefore RF parasitic capacitance), post-process solution, …
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Gold-Doped Silicon Substrate
Many traps, lower permittivity (and therefore RF parasitic capacitance), post-process solution, …
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