devices

UCLouvain’s RF-SOI team has over 30 years of experience in characterizing, extracting and modelling semiconductor transistor devices. Our expertise include small-signal modelling, extraction of intrinsic device parameters as well as extrinsic parasitics (BEOL parasitics, substrate network, etc.), large-signal behavior, device self-heating, RF and mm-wave FoMs, high-temperature and cryogenic models, and more.

Device Characterization and Parameter Extraction

Small Signal Equivalent Circuit Parameters

Wideband device model extraction [DL05b, DL07, VK07, LN21b, VK21, AM21].
Separation of intrincis anc extrinsic device parameters.

Thermal Parameters

Thermal resistance and capacitance.

Static and dynamic self-heating.

Electrical characterization techniques and effects to account for.

Device self-heating extractions [SM13, SM16, LN21h].

Extreme Conditions

Sub-THz substrate characterization [LN19].
High-Temperature device performance [AHT22], [AHT23]
Cryogenic device behavior, extraction and modelling [BKE19], [LN19c], [LN20c].