Benjamin Iñiguez, Pr., IEEE EDS Distinguished Lecturer, Full Professor at the Departament d’Enginyeria Electrònica, Elèctrica, i Automàtica, Universitat Rovira i Virgili, Tarragona, Spain.
Simulation and modeling of nanoscale multiple-gate SOI MOSFETs
We review a compact modeling techniques for Multi-Gate MOSFETs. A simple compact model can be developed for long-channel symmetric Double-Gate (DG) MOSFETs from the solution of Poisson’s equation. Different approaches to include short-channel effects are discussed. It will be shown that these types of DG MOSFET model can be extended to reproduce the behaviour of FinFETs.
However, we will present a much more accurate modeling framework valid for most Multiple-Gate MOSFET structures, such as Double-Gate MOSFETs, Triple-Gate MOSFETs, FinFETs, and Surrounding Gate MOSFETs, and which can also extended to and Single-Gate SOI MOSFETs.
In order to account for short-channel effects in nanoscale Multiple-Gate MOSFETs, the new modeling scheme is based on an analytical solution of the the 3D Poisson’s equation in subthreshold. The coupling between interfaces and gates is also inherently and adequately included.
Good agreement with experimental measurements and TCAD 3D simulations was observed. Finally, we will discuss scaling rules using the developed modeling scheme.
The conference will be held on the 9th March at 10:50 in the EPL buildings (BARB 10 lecture hall, place Sainte-Barbe, Louvain-la-Neuve).
Drinks and appetizers will be served after the presentation and question-and-answer session.
Benjamin Iñíguez received the B.S., M.S., and Ph.D. degrees in physics from the University of the Balearic Islands, Palma, Spain, in 1989, 1992,and 1996, respectively. His doctoral research focused on the development of computer-aided design models for short-channel bulk and SOI MOSFETs. From February 1997 to September 1998, he was a Postdoctoral Research Scientist with the Department of Electrical, Computer,and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, where he studied advanced devices, such as short-channel a-Si and poly-Si TFTs, GaN HEMTs, and heterodimensional MESFETs. From September 1998 to February 2001, he was a Research Scientist (Postdoctoral Marie Curie Grant Holder) with the Microelectronics Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium, working on the characterization and the modeling of thin-film and ultrathin-film SOI MOSFETs from DC to RF conditions. In February 2001, he joined, as Titular Professor, the Departament d’Enginyeria Electrònica, Elèctrica, i Automàtica, Universitat Rovira i Virgili, Tarragona, Spain, and he became Full Professor at the same university in February 2010. His current research interests are characterization and modeling of advanced electron devices, particularly nanoscale multiple gate MOSFETs and organic and polymer TFTs. Dr. Iñíguez was the recipient of the Distinction of the Catalan Government for the Promotion of University Research in 2004,and the ICREA Academia Award in 2009, also from the Catalan Government.He is the Coordinator of the European Union funded project”COMON”, targeting the development of compact models for advanced MOS structures.
Pr. Benjamin Iñiguez biography is available online on the SEDEMOS (Semiconductor Device Modeling and Simulation Consulting, Inc.) website: http://www.uib.es/depart/dfs/GTE/staff/rpicos/sedemos/bio-benja.html, includingmore details about their research area.