{"id":3333,"date":"2020-06-15T11:34:59","date_gmt":"2020-06-15T09:34:59","guid":{"rendered":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/?page_id=3333"},"modified":"2025-05-08T16:10:19","modified_gmt":"2025-05-08T14:10:19","slug":"massinissanabet","status":"publish","type":"page","link":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/team\/massinissanabet\/","title":{"rendered":"Massinissa Nabet"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-post\" data-elementor-id=\"3333\" class=\"elementor elementor-3333\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-47d4e25 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"47d4e25\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-6942a75\" data-id=\"6942a75\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-484e62f elementor-widget elementor-widget-heading\" data-id=\"484e62f\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"heading.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t<h3 class=\"elementor-heading-title elementor-size-default\">Dr. Massinissa Nabet<\/h3>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-10d847c elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"10d847c\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-8fd345c\" data-id=\"8fd345c\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-74baf0d elementor-widget elementor-widget-image\" data-id=\"74baf0d\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"image.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<img fetchpriority=\"high\" decoding=\"async\" width=\"354\" height=\"584\" src=\"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-content\/uploads\/2025\/05\/Picture14.jpg\" class=\"attachment-medium_large size-medium_large wp-image-24133\" alt=\"\" srcset=\"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-content\/uploads\/2025\/05\/Picture14.jpg 354w, https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-content\/uploads\/2025\/05\/Picture14-182x300.jpg 182w\" sizes=\"(max-width: 354px) 100vw, 354px\" \/>\t\t\t\t\t\t\t\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-d9f4aef\" data-id=\"d9f4aef\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-d509837 elementor-widget elementor-widget-text-editor\" data-id=\"d509837\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p>Massinissa Nabet was born on the 20th of April 1993 in the Beja\u00eea province, Algeria. He got his Bsc degree in Electrical Engineering in 2014, then the master degree in Electronic Systems Instrumentation in 2016 from Universit\u00e9 des Sciences et de la Technologie Houari Boumedi\u00e8ne, Algiers, Algeria. He received his PhD degree from Universit\u00e9 catholique de Louvain (UCLouvain), Ottignies-Louvain-la-Neuve, Belgium, in 2025 entitled \u201cEnhanced high-resistivity silicon-based substrates for RF and mmWave FD-SOI circuits\u201d.<\/p><p>His research focus on substrate modeling and high-frequency characterization of RF devices, including passive components such as CPW lines, inductors, combiners, crosstalk structures, baluns, and filters in Silicon-on-Insulator (SOI) technology.<\/p><p>His work encompasses comprehensive small- and large-signal characterization of advanced Fully-Depleted (FD) SOI transistors and circuit modules. Additionally, he contributes to RF Front-End Module (FEM) circuit design, with expertise in designing RF mixers, high power RF switches, and wideband power amplifiers.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-e9f099b elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"e9f099b\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-19aa5a7\" data-id=\"19aa5a7\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-1342be5 elementor-widget-divider--view-line elementor-widget elementor-widget-divider\" data-id=\"1342be5\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"divider.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<div class=\"elementor-divider\">\n\t\t\t<span class=\"elementor-divider-separator\">\n\t\t\t\t\t\t<\/span>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-5936e32 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"5936e32\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-909a397\" data-id=\"909a397\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-c79a4f0 elementor-widget elementor-widget-text-editor\" data-id=\"c79a4f0\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><span style=\"text-decoration: underline;\"><strong>Research Projects<\/strong><\/span><\/p><ul><li>mm-wave IC design<ul><li style=\"list-style-type: none;\"><ul><li>28 GHz mixer design<\/li><li>High-Power sub-6 GHz RF switches<\/li><li>Wideband power amplifier<\/li><\/ul><\/li><\/ul><\/li><li>On-wafer RF &amp; mm-wave measurements<ul><li style=\"list-style-type: none;\"><ul><li>DC-170 GHz<\/li><li>20\u00b0C to 200\u00b0C<\/li><li>Large-signal RF power measurements up to 50 dBm<\/li><\/ul><\/li><\/ul><\/li><\/ul>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t<div class=\"elementor-column elementor-col-50 elementor-top-column elementor-element elementor-element-ee173e7\" data-id=\"ee173e7\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-aa9a08f elementor-widget elementor-widget-text-editor\" data-id=\"aa9a08f\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><\/p>\n<ul>\n<li>Silicon-based substrate modelling and development\n<ul>\n<li style=\"list-style-type: none;\">\n<ul>\n<li>RF-SOI: High Resistivity and Trap-Rich<\/li>\n<li>Gold-compensated Si substrates for RF applications<\/li>\n<li>PN junction-enhanced RF-Si substrates<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n<\/li>\n<li>Physical small- and large-signal modelling of RF substrates<\/li><\/ul>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-c710175 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"c710175\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-a342473\" data-id=\"a342473\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-07bfa0e elementor-widget-divider--view-line elementor-widget elementor-widget-divider\" data-id=\"07bfa0e\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"divider.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<div class=\"elementor-divider\">\n\t\t\t<span class=\"elementor-divider-separator\">\n\t\t\t\t\t\t<\/span>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-c6118e8 elementor-section-boxed elementor-section-height-default elementor-section-height-default\" data-id=\"c6118e8\" data-element_type=\"section\" data-e-type=\"section\">\n\t\t\t\t\t\t<div class=\"elementor-container elementor-column-gap-default\">\n\t\t\t\t\t<div class=\"elementor-column elementor-col-100 elementor-top-column elementor-element elementor-element-1345fe8\" data-id=\"1345fe8\" data-element_type=\"column\" data-e-type=\"column\">\n\t\t\t<div class=\"elementor-widget-wrap elementor-element-populated\">\n\t\t\t\t\t\t<div class=\"elementor-element elementor-element-0ffbb78 elementor-widget elementor-widget-text-editor\" data-id=\"0ffbb78\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<p><span style=\"text-decoration: underline;\"><strong>Publications<\/strong><\/span><\/p><p><span style=\"color: #f00050;\"><strong>Conference Proceedings<\/strong><\/span><\/p><ol><li><b>M. Nabet<\/b>, M. Rack, Nur Zatil Ismah Hashim, C. H. de Groot, and J. -P. Raskin,\u00a0<b>\u201c<\/b><b>Behavior<\/b><b> of Gold-<\/b><b>Doped<\/b><b> Silicon <\/b><b>under<\/b><b> Small- and Large-RF Signal\u201d<\/b>, <i>Fifth<\/i><i> Joint International EUROSOI-ULIS <\/i><i>Conference<\/i><i> on SOI and <\/i><i>Ultimate<\/i> <i>Integration<\/i><i> on Silicon &#8211; <\/i><i>EuroSOI<\/i><i>-ULIS 2019<\/i>&#8220;, Grenoble, France.<\/li><li>Q. Courte, M. Rack, <b>M. Nabet,<\/b> P. Cardinael and J. -P. Raskin, &#8220;<b>High-<\/b><b>Temperature<\/b> <b>Characterization<\/b><b> of Novel Silicon-<\/b><b>Based<\/b> <b>Substrate<\/b><b> Solutions for RF-IC Applications,<\/b>&#8221;\u00a0<i>ESSDERC 2021 &#8211; IEEE 51st European Solid-State <\/i><i>Device<\/i> <i>Research<\/i> <i>Conference<\/i><i> (ESSDERC)<\/i>, 2021.<\/li><li>M. Rack, L. Nyssens,<b> M. Nabet,<\/b> D. Lederer and J. -P. Raskin, &#8220;<b>Field-<\/b><b>Effect<\/b><b> Passivation of <\/b><b>Lossy<\/b><b> Interfaces in High-<\/b><b>Resistivity<\/b><b> RF Silicon <\/b><b>Substrates<\/b><b>,<\/b>&#8221;\u00a0<i>2021 Joint International EUROSOI Workshop and International <\/i><i>Conference<\/i><i> on <\/i><i>Ultimate<\/i> <i>Integration<\/i><i> on Silicon (<\/i><i>EuroSOI<\/i><i>-ULIS)<\/i>, 2021.<\/li><li>M. Moulin, M. Rack, T. Fache, <b>M. Nabet,<\/b> Z. Chalupa, C. Plantier, F. Allibert, F. Gaillard, J. Lugo, L. Hutin and J. -P. Raskin, &#8220;<b>Nox and <\/b><b>Buried<\/b><b> PN <\/b><b>junctions<\/b> <b>effect<\/b><b> on RF performance of High-<\/b><b>Resistivity<\/b><b> Silicon <\/b><b>substrates<\/b><b>,<\/b>&#8221;\u00a0<i>2022 IEEE 22nd <\/i><i>Topical<\/i><i> Meeting on Silicon <\/i><i>Monolithic<\/i><i> Integrated Circuits in RF <\/i><i>Systems<\/i><i> (<\/i><i>SiRF<\/i><i>)<\/i>, 2022.<\/li><li>I. Bertrand,\u00a0P. Flatresse,\u00a0G. Besnard,\u00a0J.-M. Bethoux,\u00a0Z. Chalupa,\u00a0C. Plantier,\u00a0M. Rack,\u00a0<b>M. Nabet<\/b>,\u00a0J. -P. Raskinand\u00a0F. Allibert, &#8220;<b>Development<\/b><b> Of High <\/b><b>Resistivity<\/b><b> FD-SOI <\/b><b>Substrates<\/b><b> for <\/b><b>mmWave<\/b><b> Applications,<\/b>&#8221; <i>in<\/i> <i>ECS Transactions, <\/i>2022.<\/li><li>M. Rack, L. Nyssens, <b>M. Nabet,<\/b> C. Schwan, Z. Zhao, S. Lehmann, T. Herrmann, D. Henke, A. Kondrat, C. Soonekindt, F. Koch, T. Kache, D. P. Kini, O. Zimmerhackl, F. Allibert, C. Aulnette, D. Lederer and J. -P. Raskin, &#8220;<b>High-<\/b><b>Resistivity<\/b> <b>Substrates<\/b> <b>with<\/b><b> PN Interface Passivation in 22 nm FD-SOI<\/b>&#8220;,\u00a0in <i>2022 International Symposium on VLSI <\/i><i>Technology<\/i><i>, <\/i><i>Systems<\/i><i> and Applications (VLSI-TSA)<\/i>, Hsinchu, Taiwan, 2022, pp. 1-2, doi: 10.1109\/VLSI-TSA54299.2022.9771028.<\/li><li><b>M. Nabet,<\/b> M. Rack, L. Nyssens, J. -P. Raskin and D. Lederer, &#8220;<b>28 GHz Down-Conversion Mixer <\/b><b>with<\/b><b> RF Back-<\/b><b>Gate<\/b><b> Excitation <\/b><b>Topology<\/b><b> in 22-nm FD-SOI<\/b>&#8220;, in 17th European Microwave Integrated Circuits Conference (EuMIC), Milan, Italy, 2022, pp. 296-299, doi: 10.23919\/EuMIC54520.2022.9923503.<\/li><li>L. Nyssens, M. Rack, <b>M. Nabet<\/b>, C. Schwan, Z. Zhao, S. Lehmann, T. Herrmann, D. Henke, A. Kondrat, C. Soonekindt, F. Koch, T. Kache, D. P. Kini, O. Zimmerhackl, F. Allibert, C. Aulnette, D. Lederer, J.-P. Raskin,&#8221;<b>PN <\/b><b>Junctions<\/b><b> Interface Passivation in 22 nm FD-SOI for Low-<\/b><b>Loss<\/b><b> Passives<\/b>&#8220;, <i>2022 24th International <\/i><i>Microwave<\/i><i> and Radar <\/i><i>Conference<\/i><i> (MIKON)<\/i>, 2022, pp. 222-224.<\/li><li>Y.\u00a0Huang, Y. Yan, <b>M. Nabet<\/b>, F. Liu, B. Li, B. Li, Z. Han, B, -Y, Nguyen, S. Cristoloveanu, J. -P. Raskin, &#8220;<b>C-V <\/b><b>Measurement<\/b><b> and Modeling of Double-BOX Trap-Rich SOI <\/b><b>Substrate<\/b>&#8220;, in <i>9 th Joint <\/i><i>Intl<\/i> <i>EuroSOI<\/i><i> Workshop and International Conf On <\/i><i>Ultimate<\/i> <i>Integration<\/i><i> on Silicon 2023<\/i>&#8220;, Tarragona, Spain (from 10\/05\/2023 to 12\/05\/2023).<\/li><li><b>M. Nabet<\/b>, M. Rack, B. Huet, R. Tuyaerts, G. Scheen, L.-Y. Zhang, A. Emiel, C. Dorion, P. Blondy, R. Stefanini, J. -P. Raskin, &#8220;<b>High <\/b><b>Resistivity<\/b><b> Trap-Rich <\/b><b>Substrate<\/b><b> for RF MEMS Switches<\/b>&#8220;,\u00a0<i>2023 Symposium on Design, Test, <\/i><i>Integration<\/i><i> &amp; Packaging of MEMS\/MOEMS (DTIP)<\/i>, Valetta, Malta, 2023, pp. 1-4, doi: 10.1109\/DTIP58682.2023.10267954.<\/li><li>G. Scheen, R. Tuyaerts, P. Cardinael, E. Ekoga, K. Aouadi, C. Pavageau, A. Rassekh, <b>M. Nabet<\/b>, S. Yadav, J.-P. Raskin, B. Parvais, M. Emam, &#8220;<b>GaN<\/b><b>-on-<\/b><b>Porous<\/b><b> Silicon for RF Applications<\/b>&#8220;, 2023 53rd European Microwave Conference (EuMC), Berlin, Germany, 2023, pp. 842-845, doi: <u>10.23919\/EuMC58039.2023.10290465<\/u>.<\/li><li>S. Ma, <b>M. Nabet<\/b>, R. Hanus, J.-P Raskin, L. Francis and D. Lederer. &#8220;<b>Towards<\/b> <b>Porous<\/b><b> SI <\/b><b>THz<\/b> <b>Planar<\/b> <b>Waveguides<\/b><b> in Ultra-Low-<\/b><b>Resistivity<\/b> <b>Substrates<\/b>&#8220;. In\u00a02024 15th Global Symposium on Millimeter-Waves &amp; Terahertz (GSMM)\u00a0(pp. 225-227). IEEE.<\/li><li>M. Rack, <b>M. Nabet<\/b>, Y. Bendou, M. Vanbrabant, M. Moulin, Q. Courte, S. Cremer, A. Cathelin, D. Lederer, and J.- P. Raskin, \u201c<b>Low-<\/b><b>Loss<\/b><b> Silicon <\/b><b>Substrates<\/b> <b>with<\/b><b> PN Passivation in 28 nm FD-SOI<\/b>,\u201d in Tenth Joint International EUROSOI-ULIS Conference on SOI and Ultimate Integration on Silicon-EuroSOI-ULIS 2024, 2024.<\/li><li>Y. Yan, M. Rack, M. Vanbrabant, <b>M. Nabet<\/b>, A. Goebel, P. Clifton, J.-P. Raskin, \u201c<b>Traps <\/b><b>Characterization<\/b><b> in RF SOI <\/b><b>Substrates<\/b> <b>Including<\/b><b> a <\/b><b>Buried<\/b> <b>SiGe<\/b><b> Layer<\/b>,\u201d in Tenth Joint International EUROSOI-ULIS Conference on SOI and Ultimate Integration on Silicon-EuroSOI-ULIS 2024, 2024.<\/li><li><b>M. Nabet<\/b>, M. Rack, S. Cr\u00e9mer, F. Paillardet, A. Cathelin, J.- P. Raskin, and D. Lederer, \u201c<b>Sub-6 GHz RF SPDT Switches <\/b><b>Designed<\/b><b> in an Advanced 28 nm <\/b><b>Fully-Depleted<\/b><b> Silicon-on-<\/b><b>Insulator<\/b> <b>Technology<\/b> <b>with<\/b><b> a High <\/b><b>Resistivity<\/b> <b>Substrate<\/b>,\u201d in 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024, pp. 455\u2013458.<\/li><\/ol><p><span style=\"color: #f00050;\"><strong>Jour<span style=\"color: #f00050;\">nal Papers<\/span><\/strong><\/span><\/p><ol><li><strong>M. Nabet<\/strong>, M. Rack, Nur Zatil Ismah Hashim, C. H. de Groot, and J.-P. Raskin, <em><strong>&#8220;Behavior of Gold-Doped Silicon under Small- and Large-RF Signal&#8221;<\/strong><\/em>, Solid-State Electronics, vol. 168, pp. 107718, ISSN 0038-1101, 2020, <a href=\"https:\/\/www.sciencedirect.com\/science\/article\/pii\/S003811011930721X?via%3Dihub\" target=\"_blank\" rel=\"noopener\"><span style=\"color: #0000ff;\">doi: 10.1016\/j.sse.2019.107718<\/span><\/a>.<\/li><li>G. Scheen, R. Tuyaerts, M. Rack, L. Nyssens, J. Rasson, <strong>M. Nabet<\/strong> and J.-P. Raskin, <em><strong>&#8220;Post-process porous silicon RF 5G applications&#8221;<\/strong><\/em>, Solid-State Electronics, vol. 168, pp. 107719, ISSN 0038-1101, 2020, <span style=\"color: #0000ff;\"><a href=\"https:\/\/www.mendeley.com\/catalogue\/169bd3e2-d99d-3717-8db2-61699a2782c4\/\" target=\"_blank\" rel=\"noopener\"><span style=\"color: #0000ff;\">doi: 10.1016\/j.sse.2019.107719<\/span><\/a><\/span>.<b>M<\/b><\/li><li>E. Vandermolen, P. Ferrandis, F. Allibert, <b>M. Nabet,<\/b> M. Rack, J. -P. Raskin and M. Cass\u00e9, &#8220;<b>Characterization and role of deep traps on the radio frequency performances of high resistivity substrates,<\/b>&#8221; in <i>Journal of Applied Physics (JAP)<\/i>, vol. 129, 2021, doi : <u><a href=\"https:\/\/doi.org\/10.1063\/5.0045306\">https:\/\/doi.org\/10.1063\/5.0045306<\/a><\/u>.<\/li><li>Q. Courte, M. Rack, <b>M. Nabet,<\/b> P. Cardinael and J. -P. Raskin, &#8220;<b>High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications<\/b>&#8220;, in\u00a0<i>IEEE Journal of the Electron Devices Society<\/i>, vol. 10, pp. 620-626, 2022, doi: <u>10.1109\/JEDS.2022.3188893<\/u>.<\/li><li>L. Nyssens, M. Rack, <b>M. Nabet<\/b>, C. Schwan, Z. Zhao, S. Lehmann, T. Herrmann, D. Henke, A. Kondrat, C. Soonekindt, F. Koch, T. Kache, D. P. Kini, O. Zimmerhackl, F. Allibert, C. Aulnette, D. Lederer, J.-P. Raskin, &#8220;<b>High-<\/b><b>Resistivity<\/b> <b>with<\/b><b> PN Interface Passivation in 22 nm FD-SOI <\/b><b>technology<\/b><b> for Low-<\/b><b>Loss<\/b><b> Passives at RF and Millimeter-<\/b><b>Wave<\/b> <b>Frequencies<\/b>&#8220;, in <i>Solid State Electronics<\/i>, vol. 205, pp. 108656, ISSN 0038-1101, April 2023, doi: <u><a href=\"https:\/\/doi.org\/10.1016\/j.sse.2023.108656\">https:\/\/doi.org\/10.1016\/j.sse.2023.108656<\/a><\/u>.<\/li><li><b>M. Nabet<\/b>, M. Rack, Y. Yan, B. -Y. Nguyen and J. -P. Raskin, &#8220;<b>Double <\/b><b>Buried<\/b><b> Oxide Trap-Rich <\/b><b>Substrates<\/b><b> for High Frequency Applications<\/b>&#8220;, in\u00a0<i>IEEE Electron <\/i><i>Device<\/i> <i>Letters<\/i>, vol. 44, no. 4, pp. 570-573, April 2023, doi: <u>10.1109\/LED.2023.3243693<\/u>.<\/li><li>Y.\u00a0Huang, Y. Yan, <b>M. Nabet<\/b>, F. Liu, B. Li, B. Li, Z. Han, S. Cristoloveanu, J.-P. Raskin, &#8220;<b>C-V <\/b><b>Measurement<\/b><b> and Modeling of Double-BOX Trap-Rich SOI <\/b><b>Substrate<\/b>&#8220;, in <i>Solid-State Electronics<\/i>, vol. 168, pp. 107718, ISSN 0038-1101, September 2023, doi: <u><a href=\"https:\/\/doi.org\/10.1016\/j.sse.2023.108763\">https:\/\/doi.org\/10.1016\/j.sse.2023.108763<\/a><\/u>.<\/li><li>Y.\u00a0Huang, Y. Yan, <b>M. Nabet<\/b>, F. Liu, B. Li, B. Li, Z. Han, S. Cristoloveanu, J.-P. Raskin, &#8220;<b>Analysis<\/b><b> of <\/b><b>anomalous<\/b><b> C-V <\/b><b>behavior<\/b><b> for <\/b><b>extracting<\/b><b> the traps <\/b><b>density<\/b><b> in the <\/b><b>undoped<\/b> <b>polysilicon<\/b> <b>with<\/b><b> a double-BOX structure<\/b>&#8220;, in <i>Solid-State Electronics<\/i>, vol. 168, pp. 108946, ISSN 0038-1101, 2024, doi: <u><a href=\"https:\/\/doi.org\/10.1016\/j.sse.2024.108946\">https:\/\/doi.org\/10.1016\/j.sse.2024.108946<\/a><\/u>.<\/li><li>Y.\u00a0Huang, F. Liu, S. Cristoloveanu, S. Ma, <b>M. Nabet<\/b>, Y. Yan, B. Li, B. Li, B.-Y. Nguyen, Z. Han, J.-P. Raskin, &#8220;<b>C-V <\/b><b>characterization<\/b><b> of the trap-<\/b><b>rich<\/b><b> layer in a <\/b><b>novel<\/b><b> Double-BOX structure<\/b>&#8220;, in <i>Solid-State Electronics<\/i>, vol. 168, pp. 108951, ISSN 0038-1101, 2024, doi: <u><a href=\"https:\/\/doi.org\/10.1016\/j.sse.2024.108951\">https:\/\/doi.org\/10.1016\/j.sse.2024.108951<\/a><\/u>.<\/li><li>[10] L. Nyssens, <b>M. Nabet<\/b>, M. Rack, Y. Bendou, S. Wane, J. Sombrin, J.- P. Raskin, and D. Lederer, \u201c<b>Analysis<\/b><b> of Back-<\/b><b>Gate<\/b> <b>Bias<\/b><b> Control on EVM <\/b><b>Measurements<\/b><b> of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications<\/b>,\u201d IEEE Transactions on Circuits and Systems, vol. 44, no. 4, pp. 570\u2013573, 2024, doi: <u>10.1109\/TCSI.2024.3487636<\/u>.<\/li><\/ol><p><span style=\"color: #f00050;\"><strong>Book Chapters<\/strong><\/span><\/p><ol><li>M. Rack, L. Nyssens, <b>M. Nabet<\/b>, D. Lederer, J. -P. Raskin, &#8220;<b>Impact of High-<\/b><b>Resistivity<\/b> <b>Substrate<\/b><b> on RF and mm-<\/b><b>Wave<\/b><b> Performance of 22 nm FD-SOI <\/b><b>Devices<\/b><b> and Circuits<\/b>&#8220;, in &#8220;Technologies Enabling Future Mobile Connectivity &amp; Sensing&#8221; (1st ed.) River Publishers: Computer Science, Engineering &amp; Technology. ebook ISBN: 9781032633039. <u>https:\/\/doi.org\/10.1201\/9781032633039<\/u>.<\/li><\/ol>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"<p>Dr. Massinissa Nabet Massinissa Nabet was born on the 20th of April 1993 in the Beja\u00eea province, Algeria. He got his Bsc degree in Electrical Engineering in 2014, then the [&hellip;]<\/p>\n","protected":false},"author":13,"featured_media":0,"parent":5,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"elementor_header_footer","meta":{"_bbp_topic_count":0,"_bbp_reply_count":0,"_bbp_total_topic_count":0,"_bbp_total_reply_count":0,"_bbp_voice_count":0,"_bbp_anonymous_reply_count":0,"_bbp_topic_count_hidden":0,"_bbp_reply_count_hidden":0,"_bbp_forum_subforum_count":0,"site-sidebar-layout":"no-sidebar","site-content-layout":"page-builder","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"disabled","ast-breadcrumbs-content":"","ast-featured-img":"disabled","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"footnotes":""},"class_list":["post-3333","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/pages\/3333","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/users\/13"}],"replies":[{"embeddable":true,"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/comments?post=3333"}],"version-history":[{"count":14,"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/pages\/3333\/revisions"}],"predecessor-version":[{"id":24223,"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/pages\/3333\/revisions\/24223"}],"up":[{"embeddable":true,"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/pages\/5"}],"wp:attachment":[{"href":"https:\/\/sites.uclouvain.be\/RF-SOI-group\/wp-json\/wp\/v2\/media?parent=3333"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}